PART |
Description |
Maker |
M29W800DB45M6E M29W800DB45M6F M29W800DB45M6T M29W8 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29F800D |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 5V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
M29W800DB90N1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
29F800 M29F800AB M29F800AT -M295V800AB90N3T M295V8 |
Circular Connector; MIL SPEC:MIL-DTL-38999 Series II; Body Material:Metal; Series:JT; No. of Contacts:28; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Box Mount Receptacle; Body Style:Straight RoHS Compliant: No 8 Mbit 1Mb x8 or 512Kb x16, Boot Block Single Supply Flash Memory 8 Mbit 1Mb x8 or 512Kb x16 / Boot Block Single Supply Flash Memory
|
ST Microelectronics 意法半导 STMicroelectronics
|
M29F800AB70N1 M29F800AB70N6 M29F800AB70M1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics STMicroelectronics
|
M27C800-100B1TR M27C800-100B6TR M27C800-100F1TR M2 |
8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM 64K (8K x 8) UV EPROM and OTP ROM
|
意法半导 STMicroelectronics ST Microelectronics
|
M36W216 M36W216BI M36W216BI70ZA1T M36W216BI85ZA1T |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics NUMONYX 意法半导 ST Microelectronics
|
M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M27W016-100B1 M27W016-100M1 M27W016-100N1 M27W016- |
16 MBIT (1MB X16) 3V SUPPLY FLEXIBLEROM MEMORY
|
ST Microelectronics
|